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CJ2310 Datasheet(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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CJ2310 Datasheet(HTML) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
2 / 5 page Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA 60 V Zero gate voltage drain current IDSS VDS =60V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.5 2 V VGS =10V, ID =3A 105 mΩ Drain-source on-resistance (note 3) RDS(on) VGS =4.5V, ID =3A 125 mΩ Forward tranconductance (note 3) gFS VDS =15V, ID =2A 1.4 S Diode forward voltage (note 3) VSD IS=3A, VGS = 0V 1.2 V DYNAMIC CHARACTERISTICS (note 4) Input Capacitance Ciss 247 pF Output Capacitance Coss 34 pF Reverse Transfer Capacitance Crss VDS =30V,VGS =0V,f =1MHz 19.5 pF SWITCHING CHARACTERISTICS (note 4) Turn-on delay time td(on) 6 ns Turn-on rise time tr 15 ns Turn-off delay time td(off) 15 ns Turn-off fall time tf VGS=10V,VDD=30V, ID=1.5A,RGEN=1Ω 10 ns Total Gate Charge Qg 6 nC Gate-Source Charge Qgs 1 nC Gate-Drain Charge Qgd VDS =30V,VGS =4.5V,ID =3A 1.3 nC Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. 4. Guaranteed by design, not subject to producting. MOSFET ELECTRICAL CHARACTERISTICS a T =25 ℃ unless otherwise specified www.cj-elec.com 2 E,Apr,2015 |
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