CJ3134KW datasheet(2/5 Pages) JIANGSU

Part #	CJ3134KW

Description	N-Channel MOSFET

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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2

D,Jun,2015

MOSFET ELECTRICAL CHARACTERISTICS

a

T =25

℃ unless otherwise specified

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

On/Off States

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID =250µA

20

Gate-Threshold Voltage(note 3)

VGS(th)

VDS =VGS, ID =250µA

0.35

1

.1

V

Gate-Body Leakage Current

IGSS

VDS =0V, VGS =±1

0V

±

20

µA

Zero Gate Voltage Drain Current

IDSS

VDS =20V, VGS =0V

1

µA

VGS =4.5V, ID =650mA

380

VGS =2.5V, ID =550mA

450

Drain-Source On-State Resistance(note 3)

RDS(on)

VGS =1.8V, ID =450mA

800

mΩ

Forward Transconductance

g

FS

VDS =10V, ID =800mA

1

S

Dynamic Characteristics(note 4)

Input Capacitance

Ciss

120

Output Capacitance

Coss

20

Reverse Transfer Capacitance

Crss

VDS =16V,VGS =0V,f =1MHz

15

pF

Switching Times (note 4)

Turn-On Delay Time

td(on)

6.7

Rise Time

tr

4.8

Turn-Off Delay Time

td(off)

17.3

Fall Time

tf

VDD=10V,ID=500mA,

VGS=4.5V,RG=10Ω

7.4

ns

Drain-Source Diode Characteristics

Drain-Source Diode Forward Voltage (note 3)

VSD

IS=0.15A, VGS = 0V

1.2

V

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. This test is performed with no heat sink at Ta=25

℃.

3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.

4. These parameters have no way to verify.

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