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CJAC10H02 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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CJAC10H02 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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1 / 5 page  PDFN WB5×6-8L JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFN WB5×6-8L Plastic-Encapsulate MOSFETS CJAC10H0 N-Channel Power MOSFET DESCRIPTION The CJAC10H0 2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability APPLICATIONS SMPS and general purpose applications Hard switched and high frequency circuits Power switching application Uninterruptible power supply MARKING EQUIVALENT CIRCUIT CJAC10H0 2 = Part No. Solid dot=Pin1 indicator XXX=Code G 1 2 3 4 5 6 7 8 S S S D D D D www.cj-elec.com 1 A-1,Jul,2016 V(BR)DSS RDS(on)MAX ID 20 V 2.0mΩ@4.5V 100A 2.4mΩ@2.5V S D 10H02 CJAC XXX MAXIMUM RATINGS ( Ta=25 unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 V Continuous Drain Current ID 10 A Pulsed Drain Current IDM 40 A Single Pulsed Avalanche Energy EAS (1) 240 mJ Power Dissipation PD W Thermal Resistance from Junction to Ambient RθJA ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ (1).EAS condition: VDD= 15V,L=0.5mH, RG=25Ω, Starting TJ = 25°C ( ).0RXQWHGRQDJODVVHSR[\ERDUGRIPP[PP[PP W |
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