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CJMN2012 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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CJMN2012 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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1 / 5 page  JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS www.cj-elec.com 1 C,Aug,2015 CJMN2012 N-Channel MOSFET FEATURES APPLICATION MARKING: Equivalent Circuit DFNWB2×2-6L-J TrenchFET Power MOSFET Small package DFNWB2×2-6L-J Load Switch for Portable Applications V(BR)DSS RDS(on)MAX ID 20V 11mΩ@ 4.5V 12A 13mΩ@ 2.5V 16mΩ@1.8V 22mΩ@1.5V 41mΩ@1.2V ABSOLUTE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Para meter Value Unit VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±10 V ID Continuous Drain Current (note 1) 12 A IDM Collector Current-Pulse(Note3) 40 A RθJA Thermal Resistance from Junction to Ambient (note 2) 167 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) 260 ℃ |
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