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IRFS38N20DPbF Datasheet(PDF) 4 Page - Infineon Technologies AG |
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IRFS38N20DPbF Datasheet(HTML) 4 Page - Infineon Technologies AG |
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4 / 12 page  IRFB/S/SL38N20DPbF 4 2016-5-31 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area Fig. 7 Typical Source-to-Drain Diode Forward Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 100000 Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 1020 30 40 5060 70 QG Total Gate Charge (nC) 0 2 4 6 8 10 12 VDS= 160V VDS= 100V ID= 26A 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-toDrain Voltage (V) 0.10 1.00 10.00 100.00 1000.00 TJ = 25°C TJ = 175°C VGS = 0V 1 10 100 1000 VDS , Drain-toSource Voltage (V) 0.1 1 10 100 1000 Tc = 25°C Tj = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec |
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