EM6AB160TSE-4G datasheet(1/62 Pages) ETRON

Part #	EM6AB160TSE-4G

Description	32M x 16 bit DDR Synchronous DRAM

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Manufacturer	ETRON [Etron Technology, Inc.]

Direct Link	http://www.etron.com

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EtronTech

EM6AB160

Etron Technology, Inc.

No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.

TEL: (886)-3-5782345

FAX: (886)-3-5778671

Etron Technology, Inc. reserves the right to change products or specification without notice.

32M x 16 bit DDR Synchronous DRAM (SDRAM)

Advance (Rev. 1.3, Jun. /2015)

Features

• Fast clock rate: 250/200MHz

• Differential Clock CK & CK

• Bi-directional DQS

• DLL enable/disable by EMRS

• Fully synchronous operation

• Internal pipeline architecture

• Four internal banks, 8M x 16-bit for each bank

• Programmable Mode and Extended Mode registers

- CAS Latency: 2, 2.5, 3

- Burst length: 2, 4, 8

- Burst Type: Sequential & Interleaved

• Individual byte write mask control

• DM Write Latency = 0

• Auto Refresh and Self Refresh

• 8192 refresh cycles / 64ms

• Precharge & active power down

• Power supplies: VDD & VDDQ = 2.5V ± 0.2V

• Operating Temperature: TA = 0~70°C

• Interface: SSTL_2 I/O Interface

• Package: 66 Pin TSOP II, 0.65mm pin pitch

- Pb and Halogen free

• Package: 60-Ball, 8x13x1.2 mm (max) FBGA

- Pb free and Halogen Free

Table 1. Ordering Information

Overview

The EM6AB160 SDRAM is a high-speed CMOS double

data rate synchronous DRAM containing 512 Mbits. It is

internally configured as a quad 8M x 16 DRAM with a

synchronous interface (all signals are registered on the

positive edge of the clock signal, CK). Data outputs

occur at both rising edges of CK and CK . Read and

write accesses to the SDRAM are burst oriented;

accesses start at a selected location and continue for a

programmed number of locations in a programmed

sequence. Accesses begin with the registration of a

BankActivate command which is then followed by a

Read or Write command. The EM6AB160 provides

programmable Read or Write burst lengths of 2, 4, or 8.

An auto precharge function may be enabled to provide

a self-timed row precharge that is initiated at the end of

the burst sequence. The refresh functions, either Auto

or Self Refresh are easy to use. In addition, EM6AB160

features programmable DLL option. By having a

programmable mode register and extended mode

register, the system can choose the most suitable

modes to maximize its performance. These devices are

well suited for applications requiring high memory

bandwidth, result in a device particularly well suited to

high

performance

main

memory

and

graphics

applications.

Part Number

Clock Frequency

Data Rate

Package

EM6AB160TSE-4G

250MHz

500Mbps/pin

TSOPII

EM6AB160TSE-5G

200MHz

400Mbps/pin

TSOPII

EM6AB160WKE-4H

250MHz

500Mbps/pin

FBGA

EM6AB160WKE-5H

200MHz

400Mbps/pin

FBGA

TS : indicates TSOPII package

WK: indicates 8x13x1.2 mm FBGA package

E: indicates Generation Code

G: indicates Pb and Halogen free for TSOPII Package

H: indicates Pb and Halogen free for FBGA Package

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