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SPP15P10PH Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPP15P10PH Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page SP P15P10P H SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=-15 A, R GS=25 Ω mJ Gate source voltage V GS V Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C ESD Class Soldering temperature IEC climatic category; DIN IEC 68-1 -15 -10.6 128 Value 230 -60 55/175/56 -55 ... 175 ±20 260 °C 1C (1kV to 2kV) V DS -100 V R DS(on),max 0.24 Ω I D -15 A Product Summary PG-TO220-3 Type Package Marking Lead free Packing SPP15P10P H PG-TO220-3 15P10P Yes Non dry Rev 1.7 page 1 20 11-09-01 ° Halogen-free according to IEC61249_2_21 ° Qualified according to AEC Q101 |
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