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SPP06N80C3 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SPP06N80C3 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 10 page SPP06N80C3 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 785 - pF Output capacitance C oss - 33 - Effective output capacitance, energy related 5) C o(er) - 26 - Effective output capacitance, time related 6) C o(tr) - 69 - Turn-on delay time t d(on) - 25 - ns Rise time t r - 15 - Turn-off delay time t d(off) - 72 - Fall time t f - 8 - Gate Charge Characteristics Gate to source charge Q gs - 4 - nC Gate to drain charge Q gd - 15 - Gate charge total Q g - 31 41 Gate plateau voltage V plateau - 5.5 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=I S=6 A, T j=25 °C - 1 1.2 V Reverse recovery time t rr - 520 - ns Reverse recovery charge Q rr - 5 - µC Peak reverse recovery current I rrm - 18 - A 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Values V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=0/10 V, I D=6 A, R G=15 ? , T j=25 °C V DD=640 V, I D=6 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 480 V 4) I SD=ID, di/dt=400A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch V R=400 V, I F=I S=6 A, di F/dt =100 A/µs 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 1) J-STD20 and JESD22 Rev. 2.9 1 page 3 20 11-09-28 |
Similar Part No. - SPP06N80C3_11 |
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Similar Description - SPP06N80C3_11 |
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