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CJAB25N03 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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CJAB25N03 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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1 / 5 page  PDFN WB3.3×3.3-8L JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFN WB3.3×3.3-8L Plastic-Encapsulate MOSFETS CJAB25N03 N-Channel Power MOSFET DESCRIPTION The CJAB25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Battery switch Load switch High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability APPLICATIONS SMPS and general purpose applications Hard switched and high frequency circuits Uninterruptible Power Supply MARKING EQUIVALENT CIRCUIT CJAB25N03 = Part No. Solid dot=Pin1 indicator XXX=Date Code MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 25 A Pulsed Drain Current IDM 100 A Single Pulsed Avalanche Energy EAS (1) 70 mJ Power Dissipation PD 1.5 W Thermal Resistance from Junction to Ambient RθJA 83.3 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ (1).EAS condition: VDD=15V,L=0.14mH, RG=25Ω, Starting TJ = 25°C (2). Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt G 1 2 3 4 5 6 7 8 S S S D D D D V(BR)DSS RDS(on)MAX ID 30 V 10mΩ@10V 25A 14mΩ@4.5V www.cj-elec.com 1 A-5,Mar,2016 |
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