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CJP08N65 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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CJP08N65 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP08N65 N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE High Current Rating Lower RDS(on) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Maximum ratings (Ta=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 8 Pulsed Drain Current IDM 32 A Single Pulsed Avalanche Energy (note1) EAS 2 50 mJ Thermal Resistance from Junction to Ambient RθJA 62.5 ℃/W Operating and Storage Temperature Range TJ, TSTG -55 ~+150 Maximum Lead Temperature for Soldering Purposes , Duration for 5 Seconds TL 260 ℃ www.cj-elec.com 1 C,Apr,2016 MARKING EQUIVALENT CIRCUIT CJP08N65= Device code Solid dot = Green molding compound device, XXX if none, the normal device =Date Code TO-220-3L 1. GATE 2. DRAIN 3. SOURCE 1 3 2 V(BR)DSS RDS(on)MAX ID 650V 8A 1.4Ω@10V G D S XXX CJP08N65 |
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