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SPA04N80C3 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SPA04N80C3 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 10 page SPA04N80C3 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 570 - pF Output capacitance C oss - 25 - Effective output capacitance, energy related 6) C o(er) - 19 - Effective output capacitance, time related 7) C o(tr) - 51 - Turn-on delay time t d(on) - 25 - ns Rise time t r - 15 - Turn-off delay time t d(off) - 72 - Fall time t f - 12 - Gate Charge Characteristics Gate to source charge Q gs - 3 - nC Gate to drain charge Q gd - 12 - Gate charge total Q g - 23 31 Gate plateau voltage V plateau - 5.5 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=I S=4 A, T j=25 °C - 1 1.2 V Reverse recovery time t rr - 520 - ns Reverse recovery charge Q rr - 4 - µC Peak reverse recovery current I rrm - 12 - A 6) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. V R=400 V, I F=I S=4 A, di F/dt =100 A/µs Values V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=0/10 V, I D=4 A, R G=22 ? , T j=25 °C V DD=640 V, I D=4 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 480 V 2) Limited only by maximum temperature 3) Pulse width t p limited by T j,max 1) J-STD20 and JESD22 5) I SD=ID, di/dt=400A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch 4) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. Rev. 2.9 1 page 3 20 11-09-28 |
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