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SN7002W Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SN7002W Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page 2011-07-13 Rev. 2.5 Page 3 SN7002W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=0.18A 0.1 0.21 - S Input capacitance Ciss VGS=0, VDS=25V, f=1MHz - 34 45 pF Output capacitance Coss - 7.2 9.6 Reverse transfer capacitance Crss - 3 4.5 Turn-on delay time td(on) VDD=30V, VGS=10V, ID=0.23A, RG=6Ω - 2.4 3.6 ns Rise time tr - 2.8 4.2 Turn-off delay time td(off) - 6 9 Fall time tf - 8.5 12.75 Gate Charge Characteristics Gate to source charge Qgs VDD=48V, ID=0.23A - 0.11 0.17 nC Gate to drain charge Qgd - 0.42 0.63 Gate charge total Qg VDD=48V, ID=0.23A, VGS=0 to 10V - 1 1.5 Gate plateau voltage V(plateau) VDD=48V, ID = 0.23 A - 3.4 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - 0.23 A Inv. diode direct current, pulsedISM - - 0.92 Inverse diode forward voltage VSD VGS=0, IF=0.23A - 0.85 1.2 V Reverse recovery time trr VR=30V, IF=lS, diF/dt=100A/µs - 10.8 16.2 ns Reverse recovery charge Qrr - 3.2 4.8 nC |
Similar Part No. - SN7002W_11 |
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Similar Description - SN7002W_11 |
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