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CJPF08N80 Datasheet(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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CJPF08N80 Datasheet(HTML) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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2 / 4 page  Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 800 V Zero gate voltage drain current IDSS VDS =800V, VGS =0V 10 µA VDS=640V,VGS=0V,TJ=125 ℃ 100 µA Gate-body leakage current (note2) IGSS VDS =0V, VGS =±30V ± 100 nA On characteristics Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 3 4 5 V Static drain-source on-resistance RDS(on) VGS =10V, ID =4A 1.18 1.45 Ω Forward transconductance gfs VDS =50V, ID =4A 5.6 S Dynamic characteristics (note 3) Input capacitance Ciss VDS =25V,VGS =0V,f =1MHz 1580 2050 pF Output capacitance Coss 135 175 Reverse transfer capacitance Crss 13 17 Switching characteristics (note 2,3) Total gate charge Qg VDS =640V,VGS =10V,ID =8A 35 45 nC Gate-source charge Qgs 10 Gate-drain charge Qgd 14 Turn-on delay time td(on) VDD=400V, RG=25V, ID =8A 40 90 ns Turn-on rise time tr 110 230 Turn-off delay time td(off) 65 140 Turn-off fall time tf 70 150 Sourceource-drain diode characteristics Maximum diode forward continuous current IS 8 A Maximum diode forward pulse current ISM 32 A Diode forward voltage VSD IS=8A,VGS=0V 1.4 V Notes : 1. L=25mH, VDD=50V, VGS=10V,RG=25Ω,Starting TJ=25 ℃. 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. MOSFET ELECTRICAL CHARACTERISTICS a T =25 ℃ unless otherwise specified www.cj-elec.com 2 B,May,2016 |
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