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HV9919B Datasheet(PDF) 3 Page - Microchip Technology |
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HV9919B Datasheet(HTML) 3 Page - Microchip Technology |
3 / 13 page 2015 Microchip Technology Inc. 20005462B-page 3 HV9919B 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS† VIN to GND .................................................................................................................................................-0.3V to +45V VDD to GND...............................................................................................................................................-0.3V to +6.0V GATE, RAMP, DIM, ADIM to GND .............................................................................................................-0.3V to +VDD CS to VIN...................................................................................................................................................-1.0V to +0.3V Continuous total power dissipation (TA = 25.°C)..................................................................................................... 1.6W Operating temperature range................................................................................................................ -40°C to +125°C Junction temperature ...........................................................................................................................................+150°C Storage temperature range ................................................................................................................... -65°C to +150°C † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: ELECTRICAL CHARACTERISTICS (SHEET 1 OF 2) Electrical Specifications: VIN=12V, VDIM = VDD, VRAMP = GND, CVDD = 1.0 µF, RCS = 0.5Ω, TA= TJ= -40°C to +125°C, unless otherwise noted. (Note 1) Parameter Symbol Min Typ Max Units Conditions Input DC supply voltage range VIN 4.5 - 40 V DC input voltage Internally regulated voltage VDD 4.5 - 5.5 V VIN= 6.0 to 40V Supply current IIN - - 1.5 mA GATE open Shutdown supply current IIN, SDN - - 900 µA DIM< 0.7V Current limit IIN, LIM -11- mA VIN= 4.5V, VDD= 0V -5.5 - VIN= 4.5V, VDD= 4.0V Switching frequency fSW -- 2.0 MHz – VDD Undervoltage lockout thresh- old UVLO - - 4.5 V VDD rising VDD Undervoltage lockout hysteresis ∆UVLO - 500 - mV VDD falling Sense Comparator Sense voltage threshold high VCS(HI) -230 - mV (VIN- VCS) rising Sense voltage threshold low VCS(LO) -170 - mV (VIN- VCS) falling Average sense voltage VCS(AVG) 186 200 214 mV VCS(AVG) = 0.5(VCS(HI) + VCS(LO)) Propagation delay to output high tDPDH -70- ns Falling edge of (VIN- VCS) = VRS(LO)- 70mV Propagation delay to output low tDPDL -70- ns Rising edge of (VIN- VCS) = VRS(HI)+ 70mV Current-sense input current ICS -- 1.0 µA (VIN- VCS) = 200mV Current-sense threshold hysteresis VCS(HYS) 15 56 98 mV VCS(HYS) = VCS(HI) - VCS(LO) DIM Input Pin DIM input high voltage VIH 2.2 - - V – Pin DIM input low voltage VIL -- 0.7 V – Turn-on time tON -100 - ns DIM rising edge to VGATE= 0.5 x VDD, CGATE= 2.0nF Turn-off time tOFF -100 - ns DIM falling edge to VGATE= 0.5 x VDD, CGATE=2.0nF |
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