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IRLL024N Datasheet(PDF) 1 Page - International Rectifier

Part No. IRLL024N
Description  HEXFET Power MOSFET
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLL024N Datasheet(HTML) 1 Page - International Rectifier

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IRLL024N
HEXFET® Power MOSFET
PD - 91895
S
D
G
VDSS = 55V
RDS(on) = 0.065Ω
ID = 3.1A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
6/15/99
Description
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
S O T -223
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
90
120
RθJA
Junction-to-Amb. (PCB Mount, steady state)**
50
60
Thermal Resistance
°C/W
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V**
4.4
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V*
3.1
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V*
2.5
IDM
Pulsed Drain Current

12
PD @TA = 25°C
Power Dissipation (PCB Mount)**
2.1
W
PD @TA = 25°C
Power Dissipation (PCB Mount)*
1.0
W
Linear Derating Factor (PCB Mount)*
8.3
mW/°C
VGS
Gate-to-Source Voltage
± 16
V
EAS
Single Pulse Avalanche Energy
‚
120
mJ
IAR
Avalanche Current

3.1
A
EAR
Repetitive Avalanche Energy
*
0.1
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
A
www.irf.com
1


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