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HV9982K6-G Datasheet(PDF) 4 Page - Microchip Technology |
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HV9982K6-G Datasheet(HTML) 4 Page - Microchip Technology |
4 / 22 page HV9982 DS20005295B-page 4 2014 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS † VIN to GND........................................................-0.5V to +45V VDD to GND, VDD 1-3 to GND..........................--0.3V to +10V All other pins to GND .............................-0.3V to (V DD + 0.3V) Operating temperature ..................................-40°C to +125°C Storage temperature .....................................-65°C to +150°C Continuous power dissipation (TA = +25°C).............5000 mW † Notice: Stresses above those listed under “Absolute Maxi- mum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions, above those indi- cated in the operational listings of this specification, is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. 1.1 ELECTRICAL SPECIFICATIONS TABLE 1-1: ELECTRICAL CHARACTERISTICS (SHEET 1 OF 3)1 Symbol Parameter Note Min Typ Max Units Conditions Input VINDC Input DC supply voltage 1 10 - 40 V DC input voltage IINSD Shut-down mode supply current 1- - 500 μA EN ≤ 0.8V IIN Supply current - - - 4.5 mA EN ≥ 2.0V; PWMD1 = PWMD2 = PWMD3 = GND REN Pull-down resistor - 75 130 160 kΩ VEN = 5.0V Internal Regulator VDD Internally regulated voltage 1 7.25 7.75 8.25 V VIN= 12-40V; EN = HIGH; PWMD1-3 = VDD; GATE1-3 = 1nF; CLK = 6MHz UVLO VDD under voltage lockout threshold - 6.0 - 6.5 V VDD falling UVLOHYST VDD under voltage hystere- sis -- 500 - mV VDD rising PWM Dimming (PWMD1, PWMD2 and PWMD3) VPWMD(lo) PWMD input low voltage 1 - - 0.8 V --- VPWMD(hi) PWMD input high voltage 1 2.0 - - V --- RPWMD PWMD pull down resistor - 75 130 160 kΩ VPWMD = 5.0V Gate (GATE1, GATE2 and GATE3) ISOURCE Gate short circuit current, sourcing 2 0.2 - - A VGATE = 0V ISINK Gate sinking current 2 0.4 - - A VGATE = VDD TRISE Gate output rise time - - - 85 ns CGATE = 1.0nF TFALL Gate output fall time - - - 45 ns CGATE = 1.0nF DMAX Maximum duty cycle 2 - 91.7 - % --- Note 1: Applies over the full operating ambient temperature range of 0°C < TA < +85°C. 2: For design guidance only. |
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