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LM3046M Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM3046M Datasheet(HTML) 2 Page - National Semiconductor (TI) |
2 / 6 page Absolute Maximum Ratings (TA e 25 C) If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications LM3045 LM3046LM3086 Each Total Each Total Units Transistor Package Transistor Package Power Dissipation TA e 25 C 300 750 300 750 mW TA e 25 Cto55 C 300 750 mW TA l 55 C Derate at 667 mW C TA e 25 Cto75 C 300 750 mW TA l 75 C Derate at 8 mW C Collector to Emitter Voltage VCEO 15 15 V Collector to Base Voltage VCBO 20 20 V Collector to Substrate Voltage VCIO (Note 1) 20 20 V Emitter to Base Voltage VEBO 55 V Collector Current IC 50 50 mA Operating Temperature Range b 55 Cto a125 C b 40 Cto a85 C Storage Temperature Range b 65 Cto a150 C b 65 Cto a85 C Soldering Information Dual-In-Line Package Soldering (10 Sec) 260 C 260 C Small Outline Package Vapor Phase (60 Seconds) 215 C Infrared (15 Seconds) 220 C See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount devices Electrical Characteristics (TA e 25 C unless otherwise specified) Limits Limits Parameter Conditions LM3045 LM3046 LM3086 Units Min Typ Max Min Typ Max Collector to Base Breakdown Voltage (V(BR)CBO)IC e 10 mA IE e 0 2060 2060 V Collector to Emitter Breakdown Voltage (V(BR)CEO)IC e 1 mA IB e 0 1524 1524 V Collector to Substrate Breakdown IC e 10 mA ICI e 0 20 60 20 60 V Voltage (V(BR)CIO) Emitter to Base Breakdown Voltage (V(BR)EBO)IE 10 mA IC e 05 7 5 7 V Collector Cutoff Current (ICBO)VCB e 10V IE e 0 0002 40 0002 100 nA Collector Cutoff Current (ICEO)VCE e 10V IB e 0 05 5 m A Static Forward Current Transfer VCE e 3V IC e 10 mA 100 100 Ratio (Static Beta) (hFE) IC e 1 mA 40 100 40 100 IC e 10 mA 54 54 Input Offset Current for Matched VCE e 3V IC e 1mA 03 2 m A Pair Q1 and Q2 lIO1 b IIO2l Base to Emitter Voltage (VBE)VCE e 3V IE e 1mA 0715 0715 V IE e 10 mA 0800 0800 Magnitude of Input Offset Voltage for VCE e 3V IC e 1mA 045 5 mV Differential Pair lVBE1 b VBE2l Magnitude of Input Offset Voltage for Isolated VCE e 3V IC e 1mA Transistors lVBE3 b VBE4l lVBE4 b VBE5l 045 5 mV lVBE5 b VBE3l Temperature Coefficient of Base to VCE e 3V IC e 1mA Emitter Voltage DVBE D T J b 19 b 19 mV C Collector to Emitter Saturation Voltage (VCE(SAT))IB e 1 mA IC e 10 mA 023 023 V Temperature Coefficient of VCE e 3V IC e 1mA Input Offset Voltage DV10 D T J 11 m V C Note 1 The collector of each transistor of the LM3045 LM3046 and LM3086 is isolated from the substrate by an integral diode The substrate (terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action 2 |
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