ASI4UE-F-G1-ST datasheet(8/70 Pages) IDT

Part #	ASI4UE-F-G1-ST

Description	AS-Interface Spec. V3.0 Compliant Universal AS-i IC

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Manufacturer	IDT [Integrated Device Technology]

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ASI4U / ASI4U-E / ASI4U-F Datasheet

8

January 26, 2016

2

General Device Specifications

Important: Stresses beyond those listed under “Absolute Maximum Ratings” (section 2.1) may cause permanent

damage to the device. These are stress ratings only and functional operation of the device at these or any other

conditions beyond those indicated under “Recommended Operating Conditions” are not implied. Exposure to

conditions rated as the absolute maximum for extended periods might affect device reliability.

2.1. Absolute Maximum Ratings (Non-Operating)

Table 2.1

Absolute Maximum Ratings

Parameter

Symbol

Conditions

Min

Max

Unit

Voltage reference

V0V, VGND

0

V

Voltage difference between

ASIP and ASIN (VASIP - VASIN)

1)

VASIP-ASIN

-0.3

40

V

Pulse voltage

between ASIP and ASIN

(VASIP - VASIN)

VASIP-ASIN_P

Pulse width

≤ 50µs

Repetition rate

≤ 0.5Hz

-0.3

50

V

Pulse voltage

between ASIP and 0V

(VASIP – V0V)

2)

VASIP

Pulse width

≤ 50µs

Repetition rate

≤ 0.5Hz

-0.3

50

V

Voltage between ASIN and 0V

(VASIN – V0V)

2)

VASIN

-6.0

6.0

V

Power supply input voltage

VUIN

-0.3

40

V

Pulse voltage at power

supply input

VUIN_P

Pulse width

≤ 50µs

Repetition rate

≤ 0.5Hz

-0.3

50

V

Voltage at DI3, DI2, DI1, DI0,

DO3, DO2, DO1, DO0, P3, P2,

P1, P0, DSR, PST, LED1,

LED2, FID, IRD, and UOUT pins

Vinputs1

-0.3

VUOUT + 0.3

V

Voltage at OSC1, OSC2, CAP,

and U5R pins

Vinputs2

-0.3

7

V

Input current into any pin except

supply pins

Iin

Latch-up resistance, reference

to pin 0V

-50

50

mA

Humidity – non-condensing

H

Level 4 according to

JEDEC-020D standard

Electrostatic discharge –

Human Body Model (HBM1)

VHBM1

C = 100pF charged to VHBM1

with resistor R = 1.5k

Ω in

series

3500

V

Electrostatic discharge –

Human Body Model (HBM2)

VHBM2

C = 100pF charged to VHBM2

with resistor R = 1.5k

Ω in

series

2000

V

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