Electronic Components Datasheet Search |
|
LM3146 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
|
|
LM3146 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
2 / 6 page Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications LM3146 Units Power Dissipation Each transistor TA e 25 Cto55 C 300 mW TA l 55 C Derate at 667 mW C Power Dissipation Total Package TA e 25 C 500 mW TA l 25 C Derate at 667 mW C Collector to Emitter Voltage VCEO 30 V Collector to Base Voltage VCBO 40 V Collector to Substrate Voltage VCIO (Note 1) 40 V Emitter to Base Voltage VEBO (Note 2) 5 V Collector to Current IC 50 mA Operating Temperature Range b 40 to a85 C Storage Temperature Range b 65 to a150 C Soldering Information Dual-In-Line Package Soldering (10 seconds) 260 C Small Outline Package Vapor Phase (60 seconds) 215 C Infrared (15 seconds) 220 C See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering sur- face mount devices DC Electrical Characteristics TA e 25 C Symbol Parameter Conditions Limits Units Min Typ Max V(BR)CBO Collector to Base Breakdown Voltage IC e 10 mA IE e 040 72 V V(BR)CEO Collector to Emitter Breakdown Voltage IC e 1 mA IB e 030 56 V V(BR)CIO Collector to Substrate Breakdown ICI e 10 mA IB e 0 40 72 V Voltage IE e0 V(BR)EBO Emitter to Base Breakdown Voltage IC e 0 IE e 10 mA5 7 V (Note 2) ICBO Collector Cutoff Current VCB e 10V IE e 0 0002 100 nA ICEO Collector Cutoff Current VCE e 10V IB e 0 (Note 3) 5 m A hFE Static Forward Current Transfer IC e 10 mA VCE e 5V 85 Ratio (Static Beta) IC e 1 mA VCE e 5V 30 100 IC e 10 mA VCE e 5V 90 IB1–IB2 Input Offset Current for Matched IC1 e 1C2 e 1 mA 03 2 m A Pair Q1 and Q2 VCE e 5V VBE Base to Emitter Voltage IC e 1 mA VCE e 3V 063 073 083 V VBE1–VBE2 Magnitude of Input Offset Voltage VCE e 5V IE e 1mA 048 5 mV for Differential Pair D VBE DT Temperature Coefficient of Base VCE e 5V IE e 1mA b 19 mV C to Emitter Voltage VCE(SAT) Collector to Emitter Saturation IC e 10 mA IB e 1mA 033 V Voltage D V10 DT Temperature Coefficient of Input IC e 1 mA VCE e 5V 11 m V C Offset Voltage Note 1 The collector of each transistor is isolated from the substrate by an integral diode The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action To avoid undesired coupling between transistors the substrate terminal should be maintained at either dc or signal (ac) ground A suitable bypass capacitor can be used to establish a signal ground Note 2 If the transistors are forced into zener breakdown (V(BR)EBO) degradation of forward transfer current ratio (hFE) can occur Note 3 See curve 2 |
Similar Part No. - LM3146 |
|
Similar Description - LM3146 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |