 2014 Microchip Technology Inc.

DS20005333A-page 3

HV9861A

1.0

ELECTRICAL

CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS

LD, PWMD, GATE to GND................. ....-0.3V to (V

CS, RT to GND .............................................. ....-0.3V to 5.0V

Operating temperature..................................-40°C to +125°C

Storage temperature .....................................-65°C to +150°C

8-lead SOIC ...............................................650 mW

16-lead SOIC ...........................................1000 mW

Note: Stresses above those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions, above those indicated in the

operational listings of this specification, is not implied. Expo-

sure to maximum rating conditions for extended periods may

affect device reliability.

1.1

ELECTRICAL SPECIFICATIONS

TABLE 1-1:

Symbol

Parameter

Note

Min

Typ

Max

Units Conditions

Input

Input DC supply voltage

3

15

-

450

V

DC input voltage

Shut-down mode supply

current

3

-

0.5

1.1

mA

Pin PWMD to GND

Internal Regulator

Internally regulated voltage

-

7.25

7.50

8.20

V

500pF at GATE; RT = 226kΩ

--

-

1

V

500pF at GATE; RT = 226kΩ

--

-

100

mV

500pF at GATE; RT = 226kΩ

UVLO

threshold

3

6.45

-

-

V

∆UVLO

hysteresis

--

500

-

mV

3

500

-

-

mV

Maximum input current

(limited by UVLO)

4

3.5

-

-

mA

4

1.5

-

-

PWM Dimming

PWMD input low voltage

3

--

0.8

V

PWMD input high voltage

3

2.2

-

-

V

Internal pull-down current at

PWMD

-8.5

-

13.5