IS62C1024L-35T datasheet(4/11 Pages) ISSI

Part #	IS62C1024L-35T

Description	128K x 8 LOW POWER CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

Logo

4 / 11 page

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. E

11/26/03

IS62C1024L

ISSI®

READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)

-35

-70

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

tRC

ReadCycleTime

35

—

70

—

ns

tAA

AddressAccessTime

—

35

—

70

ns

tOHA

OutputHoldTime

3

—

3

—

ns

tACE1

CE1AccessTime

—

35

—

70

ns

tACE2

CE2AccessTime

—

35

—

70

ns

tDOE

OEAccessTime

—

10

—

35

ns

tLZOE(2)

OEtoLow-ZOutput

0

—

0

—

ns

tHZOE(2)

OEtoHigh-ZOutput

0

10

0

25

ns

tLZCE1(2)

CE1toLow-ZOutput

3

—

10

—

ns

tLZCE2(2)

CE2toLow-ZOutput

3

—

10

—

ns

tHZCE(2)

CE1orCE2toHigh-ZOutput

0

10

0

25

ns

Notes:

1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and

output loading specified in Figure 1a.

2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-35 ns

-70 ns

Symbol

Parameter

TestConditions

Min. Max.

Unit

ICC

VDDDynamicOperating

VDD= Max.,

CE=VIL

Com.

—

100

—

70

mA

SupplyCurrent

IOUT = 0 mA, f = fMAX

Ind.

—

110

—

80

ISB1

TTLStandbyCurrent

VDD=Max.,

Com.

—

10

—

10

mA

(TTLInputs)

VIN =VIHorVIL,

CE1

≥VIH,

Ind.

—

15

—

15

or CE2

≤VIL,f=0

ISB2

CMOSStandby

VDD=Max.,

Com.

—

500

—

500

µA

Current(CMOSInputs)

CE1

≤VDD–0.2V,

Ind.

—

750

—

750

CE2

≤0.2V,VIN≥VDD–0.2V,

or VIN

≤0.2V, f=0

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

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IS62C1024L-35T Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

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