IS61LV25616AL-12TI datasheet(4/12 Pages) ISSI

Part #	IS61LV25616AL-12TI

Description	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

02/21/03

IS61LV25616AL

ISSI®

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

VOH

Output HIGH Voltage

VDD = Min., IOH = –4.0 mA

2.4

—

V

VOL

Output LOW Voltage

VDD = Min., IOL = 8.0 mA

—

0.4

V

VIH

Input HIGH Voltage

2.0

VDD + 0.3

V

VIL

Input LOW Voltage(1)

–0.3

0.8

V

ILI

Input Leakage

GND

≤ VIN ≤ VDD

Com.

–2

2

µA

Ind.

–5

5

ILO

Output Leakage

GND

≤ VOUT ≤ VDD

Com.

–2

2

µA

Outputs Disabled

Ind.

–5

5

Notes:

1. VIL (min.) = –2.0V for pulse width less than 10 ns.

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

Value

Unit

VTERM

Terminal Voltage with Respect to GND

–0.5 to VDD+0.5

V

TSTG

Storage Temperature

–65 to +150

°C

PT

Power Dissipation

1.0

W

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of

the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect reliability.

OPERATING RANGE

VDD

Range

Ambient Temperature

10ns

12ns

Commercial

0°C to +70°C

3.3V +10%, -5%

3.3V + 10%

Industrial

–40°C to +85°C

3.3V +10%, -5%

3.3V + 10%

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IS61LV25616AL-12TI Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

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