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IRF530PBF Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # IRF530PBF
Description  N-Channel MOSFET Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF530PBF Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
IRF530PBF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
100
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 8.4A
0.16
Ω
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 100V; VGS=0
25
uA
VSD
Forward On-Voltage
IS= 14A; VGS=0
2.5
V
Ciss
Input Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
670
pF
Coss
Output Capacitance
250
pF
Crss
Reverse Transfer Capacitance
60
pF
·
SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
Td(on)
Turn-on Delay Time
VDD=50V,ID=14A
VGS=10V
RGS=12Ω
RGEN=3.6Ω
11
ns
Tr
Rise Time
23
ns
Td(off)
Turn-off Delay Time
31
ns
Tf
Fall Time
24
ns


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