K9K1208U0M-YCB0, K9K1208U0M-YIB0

FLASH MEMORY

1

Document Title

64M x 8 Bit NAND Flash Memory

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you

have any questions, please contact the SAMSUNG branch office near your office.

Revision No

0.0

0.1

0.2

0.3

Remark

Preliminary

Preliminary

Final

History

1. Initial issue

- The followings are disprepancy items between K9K5608U0M (256Mb

DDP) and K9K1208U0M (512Mb DDP).

1. Changed Input / Output Capacitance

- Input / Output Capacitance (Max.) : 20 pF --> 30pF

- Input Capacitance (Max.) : 20 pF --> 30pF

1. Changed SE pin description

- SE is recommended to coupled to GND or Vcc and should not be

toggled during reading or programming.

1. Changed don’t care mode in address cycles

- *X can be "High" or "Low" => *L must be set to "Low"

2. Explain how pointer operation works in detail.

3. Renamed GND input (pin # 6) on behalf of SE (pin # 6)

- The SE input controls the access of the spare area. When SE is high,

the spare area is not accessible for reading or programming. SE is rec

ommended to be coupled to GND or Vcc and should not be toggled

during reading or programming.

=> Connect this input pin to GND or set to static low state unless the

sequential read mode excluding spare area is used.

4. Updated operation for tRST timing

- If reset command(FFh) is written at Ready state, the device goes into

Busy for maximum 5us.

AC Characteristics

K9K5608U0M

K9K1208U0M

Read Cycle Time (tRC)

Min. 50ns

Min. 60ns

Write Cycle Time (tWC)

Min. 50ns

Min. 60ns

WE High hold Time (tWH)

Min. 15ns

Min. 25ns

Data Hold Time (tDH)

Min. 10ns

Min. 15ns

RE High Hold Time (tREH)

Min. 15ns

Min. 25ns

Draft Date

June 19th 2000

June 24th 2000

July 17th 2000

Nov. 20th 2000

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html