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K9K1208U0M-YCB0 Datasheet(PDF) 1 Page - Samsung semiconductor |
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K9K1208U0M-YCB0 Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 26 page K9K1208U0M-YCB0, K9K1208U0M-YIB0 FLASH MEMORY 1 Document Title 64M x 8 Bit NAND Flash Memory Revision History The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. Revision No 0.0 0.1 0.2 0.3 Remark Preliminary Preliminary Final History 1. Initial issue - The followings are disprepancy items between K9K5608U0M (256Mb DDP) and K9K1208U0M (512Mb DDP). 1. Changed Input / Output Capacitance - Input / Output Capacitance (Max.) : 20 pF --> 30pF - Input Capacitance (Max.) : 20 pF --> 30pF 1. Changed SE pin description - SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming. 1. Changed don’t care mode in address cycles - *X can be "High" or "Low" => *L must be set to "Low" 2. Explain how pointer operation works in detail. 3. Renamed GND input (pin # 6) on behalf of SE (pin # 6) - The SE input controls the access of the spare area. When SE is high, the spare area is not accessible for reading or programming. SE is rec ommended to be coupled to GND or Vcc and should not be toggled during reading or programming. => Connect this input pin to GND or set to static low state unless the sequential read mode excluding spare area is used. 4. Updated operation for tRST timing - If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us. AC Characteristics K9K5608U0M K9K1208U0M Read Cycle Time (tRC) Min. 50ns Min. 60ns Write Cycle Time (tWC) Min. 50ns Min. 60ns WE High hold Time (tWH) Min. 15ns Min. 25ns Data Hold Time (tDH) Min. 10ns Min. 15ns RE High Hold Time (tREH) Min. 15ns Min. 25ns Draft Date June 19th 2000 June 24th 2000 July 17th 2000 Nov. 20th 2000 Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html |
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