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K9K1208U0M-YCB0 Datasheet(PDF) 11 Page - Samsung semiconductor |
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K9K1208U0M-YCB0 Datasheet(HTML) 11 Page - Samsung semiconductor |
11 / 26 page K9K1208U0M-YCB0, K9K1208U0M-YIB0 FLASH MEMORY 11 Erase Flow Chart Start I/O 6 = 1 ? I/O 0 = 0 ? No * Write 60h Write Block Address Write D0h Read Status Register or R/B = 1 ? Erase Error Yes No : If erase operation results in an error, map out the failing block and replace it with another block. * Erase Completed Yes Read Flow Chart Start Verify ECC No Write 00h Write Address Read Data ECC Generation Reclaim the Error Page Read Completed Yes Block Replacement NAND Flash Technical Notes (Continued) When the error happens with page "a" of Block "A", try to write the data into another Block "B" from an exter- nal buffer. Then, prevent further system access to Block "A" (by creating a "invalid block" table or other appropriate scheme.) Buffer memory error occurs Block A Block B Page a |
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