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CJS2010 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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CJS2010 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 5 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS www.cj-elec.com 1 B,Sep,2016 CJS2010 Dual N-channel MOSFET FEATURE APPLICATION MARKING MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) TSSOP8 Equivalent Circuit Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID 10 A Pulsed Drain Current (note 1) IDM 36 A Thermal Resistance from Junction to Ambient (note 2) RθJA 125 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ Battery Protection Load Switch Power Management TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package S2010= Device code , YY=Date Code Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none,the normal device. S2010 YY S2010 YY V(BR)DSS RDS(on)MAX ID 20V 9.5mΩ@4.5V 10A 10mΩ@4V 10.5mΩ@3.5V 11.5mΩ@3.1V 13mΩ@2.5V |
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