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FDC6000NZ Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDC6000NZ Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 7 page  June 2004 2004 Fairchild Semiconductor Corporation FDC6000NZ Rev E1 (W) FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Applications • Battery management/Charger Application • Load switch Features • 6.5 A, 20 V RDS(ON) = 20 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.5 V • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) • FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size 3 2 1 4 5 6 Bottom Drain Contact Bottom Drain Contact MOSFET Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) 7.3 A – Pulsed 20 PD Power Dissipation for Dual Operation (Note 1a) 1.6 W Power Dissipation for Single Operation (Note 1a) 1.8 (Note 1b) 1.2 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 68 °C/W RθJc Thermal Resistance, Junction-to-Case (Note 1a) 1 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .0NZ FDC6000NZ 7’’ 8mm 3000 units SuperSOT-6 TM FLMP G1 S1 S1 S2 G2 S2 SuperSOT-6 TM FLMP G1 S1 S1 S2 G2 S2 |
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