Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

FDP14AN06LA0 Datasheet(PDF) 7 Page - Fairchild Semiconductor

Part # FDP14AN06LA0
Description  N-Channel PowerTrench MOSFET 60V, 60A, 14.6m?
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDP14AN06LA0 Datasheet(HTML) 7 Page - Fairchild Semiconductor

Back Button FDP14AN06LA0 Datasheet HTML 3Page - Fairchild Semiconductor FDP14AN06LA0 Datasheet HTML 4Page - Fairchild Semiconductor FDP14AN06LA0 Datasheet HTML 5Page - Fairchild Semiconductor FDP14AN06LA0 Datasheet HTML 6Page - Fairchild Semiconductor FDP14AN06LA0 Datasheet HTML 7Page - Fairchild Semiconductor FDP14AN06LA0 Datasheet HTML 8Page - Fairchild Semiconductor FDP14AN06LA0 Datasheet HTML 9Page - Fairchild Semiconductor FDP14AN06LA0 Datasheet HTML 10Page - Fairchild Semiconductor FDP14AN06LA0 Datasheet HTML 11Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 7 / 11 page
background image
©2004 Fairchild Semiconductor Corporation
FDB14AN06LA0 / FDP14AN06LA0 Rev. B
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, TJM, and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PDM, in an
application.
Therefore
the
application’s
ambient
temperature, TA (
oC), and thermal resistance RθJA (oC/W)
must be reviewed to ensure that TJM is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
In using surface mount devices such as the TO-263
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
power dissipation ratings. Precise determination of PDM is
complex and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild
provides
thermal
information
to
assist
the
designer’s preliminary application evaluation. Figure 21
defines the RθJA for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction
temperature
or
power
dissipation.
Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
(EQ. 1)
P
DM
T
JM
T
A
()
RθJA
-----------------------------
=
Area in Inches Squared
(EQ. 2)
RθJA
26.51
19.84
0.262
Area
+
()
-------------------------------------
+
=
(EQ. 3)
RθJA
26.51
128
1.69
Area
+
()
----------------------------------
+
=
Area in Centimeters Squared
Figure 21. Thermal Resistance vs Mounting
Pad Area
20
40
60
80
110
0.1
RθJA = 26.51+ 19.84/(0.262+Area) EQ.2
AREA, TOP COPPER AREA in2 (cm2)
(0.645)
(6.45)
(64.5)
RθJA = 26.51+ 128/(1.69+Area) EQ.3


Similar Part No. - FDP14AN06LA0

ManufacturerPart #DatasheetDescription
logo
Inchange Semiconductor ...
FDP14AN06LA0 ISC-FDP14AN06LA0 Datasheet
332Kb / 2P
   isc N-Channel MOSFET Transistor
More results

Similar Description - FDP14AN06LA0

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
FDD14AN06LA0-F085 ONSEMI-FDD14AN06LA0-F085 Datasheet
870Kb / 12P
   N-Channel PowerTrench짰 MOSFET 60V, 50A, 14.6m廓
September-2017, Rev. 3
logo
Fairchild Semiconductor
FDD14AN06L_F085 FAIRCHILD-FDD14AN06L_F085_10 Datasheet
378Kb / 11P
   N-Channel PowerTrench짰 MOSFET 60V, 50A, 14.6m廓
FDS5680 FAIRCHILD-FDS5680 Datasheet
261Kb / 8P
   60V N-Channel PowerTrench??MOSFET
FDS9945 FAIRCHILD-FDS9945 Datasheet
73Kb / 5P
   60V N-Channel PowerTrench MOSFET
FDP5680 FAIRCHILD-FDP5680 Datasheet
440Kb / 16P
   60V N-Channel PowerTrench??MOSFET
FDS5670 FAIRCHILD-FDS5670 Datasheet
250Kb / 8P
   60V N-Channel PowerTrench??MOSFET
FDS5690 FAIRCHILD-FDS5690 Datasheet
236Kb / 8P
   60V N-Channel PowerTrench MOSFET
FDS5170N7 FAIRCHILD-FDS5170N7 Datasheet
201Kb / 6P
   60V N-Channel PowerTrench MOSFET
FDP5645 FAIRCHILD-FDP5645 Datasheet
422Kb / 10P
   60V N-Channel PowerTrench MOSFET
FDD5612 FAIRCHILD-FDD5612 Datasheet
147Kb / 5P
   60V N-Channel PowerTrench??MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com