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FDW9926NZ Datasheet(HTML) 2 Page - Fairchild Semiconductor

Part No. FDW9926NZ
Description  Common Drain N-Channel 2.5V specified PowerTrench MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDW9926NZ Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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FDW9926NZ Rev. D(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250
µA
20
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
15
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
µA
IGSS
Gate–Body Leakage
VGS =
±12 V, V
DS = 0 V
±10
µA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
µA
0.6
1
1.5
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
–3.1
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
ID = 4.5 A
VGS = 2.5 V,
ID = 3.8 A
VGS = 4.5 V, ID = 4.5A, TJ=125
°C
27
38
36
32
45
49
m
gFS
Forward Transconductance
VDS = 5 V,
ID = 4.5 A
22
S
Dynamic Characteristics
Ciss
Input Capacitance
600
pF
Coss
Output Capacitance
160
pF
Crss
Reverse Transfer Capacitance
VDS = 10 V,
V GS = 0 V,
f = 1.0 MHz
90
pF
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
1.4
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
8
16
ns
tr
Turn–On Rise Time
8
16
ns
td(off)
Turn–Off Delay Time
14
26
ns
tf
Turn–Off Fall Time
VDD = 10 V,
ID = 1 A,
VGS = 4.5 V,
RGEN = 6
4
8
ns
Qg
Total Gate Charge
5.7
8
nC
Qgs
Gate–Source Charge
1.3
nC
Qgd
Gate–Drain Charge
VDS = 10 V,
ID = 4.5 A,
VGS = 4.5 V
1.7
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
0.83
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 0.83 A (Note 2)
0.7
1.2
V
trr
Diode Reverse Recovery Time
16
nS
Qrr
Diode Reverse Recovery Charge
IF = 4.5 A,
diF/dt = 100 A/µs
5
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA is 77°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 114 °C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.


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