2N2222AU datasheet(1/3 Pages) SEMTECH_ELEC

Part #	2N2222AU

Description	PNP Silicon Epitaxial Planar Transistor

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Manufacturer	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

Direct Link	http://www.semtech.net.cn

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Dated：18/01/2016

Rev：03

®

SEMTECH ELECTRONICS LTD.

2N2222AU

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.

Absolute Maximum Ratings (Ta = 25℃)

Parameter

Symbol

Value

Unit

Collector Base Voltage

VCBO

75

V

Collector Emitter Voltage

VCEO

40

V

Emitter Base Voltage

VEBO

6

V

Collector Current

IC

600

mA

Power Dissipation

Ptot

625

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

- 55 to + 150

℃

Characteristics at Ta = 25℃

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at VCE = 10 V, IC = 0.1 mA

at VCE = 10 V, IC = 1 mA

at VCE = 10 V, IC = 10 mA

at VCE = 10 V, IC = 150 mA

at VCE = 10 V, IC = 500 mA

hFE

35

50

75

100

40

-

300

-

Collector Base Cutoff Current

at VCB = 60 V

ICBO

-

10

nA

Collector Base Breakdown Voltage

at IC = 10 µA

V(BR)CBO

75

-

V

Collector Emitter Breakdown Voltage

at IC = 10 mA

V(BR)CEO

40

-

V

Emitter Base Breakdown Voltage

at IE = 10 µA

V(BR)EBO

6

-

V

Collector Emitter Saturation Voltage

at IC = 150 mA, IB = 15 mA

at IC = 500 mA, IB = 50 mA

VCE(sat)

-

0.3

1

V

Base Emitter Saturation Voltage

at IC = 150 mA, IB = 15 mA

at IC = 500 mA, IB = 50 mA

VBE(sat)

0.6

-

1.2

2

V

Gain Bandwidth Product

at IC = 20 mA, VCE = 20 V, f = 100 MHz

fT

250

-

MHz

Collector Output Capacitance

at VCB = 10 V, f = 1 MHz

Cob

-

8

pF

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