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2SK1118 Datasheet(PDF) 2 Page - SEMTECH ELECTRONICS LTD. |
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2SK1118 Datasheet(HTML) 2 Page - SEMTECH ELECTRONICS LTD. |
2 / 4 page Dated : 04/01/2016 Rev:01 ® SEMTECH ELECTRONICS LTD. 2SK1118 Electrical Characteristics at Ta = 25℃ Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at ID = 10 mA V(BR)DSS 600 - - V Drain-Source Leakage Current at VDS = 600 V IDSS - - 300 µA Gate-Source Leakage Current at VGS = ± 25 V IGSS - - ± 100 nA Gate-Source Threshold Voltage at VDS = 10 V, ID = 1 mA VGS(th) 1.5 - 3.5 V Drain-Source On-State Resistance at VGS = 10 V, ID = 3 A RDS(on) - - 1.25 Ω Forward Transconductance at VDS = 10 V, ID = 3 A gFS 3 - - S Input Capacitance at VDS = 10 V, f = 1 MHz Ciss - - 2000 pF Output Capacitance at VDS = 10 V, f = 1 MHz Coss - - 380 pF Reverse Transfer Capacitance at VDS = 10 V, f = 1 MHz Crss - - 120 pF Turn-On Delay Time at VDD = 300 V, VGS = 10 V, ID = 3 A, RL = 100 Ω td(on) - - 80 ns Turn-On Rise Time at VDD = 300 V, VGS = 10 V, ID = 3 A, RL = 100 Ω tr - - 50 ns Turn-Off Delay Time at VDD = 300 V, VGS = 10 V, ID = 3 A, RL = 100 Ω td(off) - - 170 ns Turn-Off Fall Time at VDD = 300 V, VGS = 10 V, ID = 3 A, RL = 100 Ω tf - - 40 ns |
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