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70V08L20PFGI8 Datasheet(PDF) 9 Page - Integrated Device Technology |
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70V08L20PFGI8 Datasheet(HTML) 9 Page - Integrated Device Technology |
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9 / 21 page  9 IDT70V08S/L High-Speed 3.3V 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranted by device characterization, but is not production tested. 3. To access RAM, CE= VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. 4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 5. 'X' in part numbers indicates power rating (S or L). AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(5) Symbol Parameter 70V08X15 Com'l Only 70V08X20 Com'l & Ind Unit Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 15 ____ 20 ____ ns tEW Chip Enable to End-of-Write(3) 12 ____ 15 ____ ns tAW Address Valid to End-of-Write 12 ____ 15 ____ ns tAS Address Set-up Time(3) 0 ____ 0 ____ ns tWP Write Pulse Width 12 ____ 15 ____ ns tWR Write Recovery Time 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 10 ____ 15 ____ ns tHZ Output High-Z Time(1,2) ____ 10 ____ 10 ns tDH Data Hold Time(4) 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 10 ____ 10 ns tOW Output Active from End-of-Write(1,2,4) 0 ____ 0 ____ ns tSWRD SEM Flag Write to Read Time 5 ____ 5 ____ ns tSPS SEM Flag Contention Window 5 ____ 5 ____ ns 3740 tbl 13a Symbol Parameter 70V08X25 Com'l Only 70V08X35 Com'l Only Unit Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 25 ____ 35 ____ ns tEW Chip Enable to End-of-Write(3) 20 ____ 30 ____ ns tAW Address Valid to End-of-Write 20 ____ 30 ____ ns tAS Address Set-up Time(3) 0 ____ 0 ____ ns tWP Write Pulse Width 20 ____ 25 ____ ns tWR Write Recovery Time 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 15 ____ 20 ____ ns tHZ Output High-Z Time(1,2) ____ 15 ____ 20 ns tDH Data Hold Time(4) 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 15 ____ 20 ns tOW Output Active from End-of-Write(1,2,4) 0 ____ 0 ____ ns tSWRD SEM Flag Write to Read Time 5 ____ 5 ____ ns tSPS SEM Flag Contention Window 5 ____ 5 ____ ns 3740 tbl 13b |
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