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70V18L20PFG Datasheet(PDF) 10 Page - Integrated Device Technology

Part # 70V18L20PFG
Description  HIGH-SPEED 3.3V 64K x 9 DUAL-PORT STATIC RAM
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

70V18L20PFG Datasheet(HTML) 10 Page - Integrated Device Technology

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IDT70V18L
High-Speed 3.3V 64K x 9 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
10
NOTES:
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and BUSY (M/S = VIH)".
2. To ensure that the earlier of the two ports wins.
3. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual), or tDDD – tDW (actual).
4. To ensure that the write cycle is inhibited on port "B" during contention on port "A".
5. To ensure that a write cycle is completed on port "B" after contention on port "A".
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
70V18L15
Com'l Only
70V18L20
Com'l
& Ind
Symbol
Parameter
Min.Max.Min.Max.
Unit
BUSY
TIMING (M/S=VIH)
tBAA
BUSY
Access Time from Address Match
____
15
____
20
ns
tBDA
BUSY
Disable Time from Address Not Matched
____
15
____
20
ns
tBAC
BUSY
Access Time from Chip Enable Low
____
15
____
20
ns
tBDC
BUSY
Access Time from Chip Enable High
____
15
____
17
ns
tAPS
Arbitration Priority Set-up Time(2)
5
____
5
____
ns
tBDD
BUSY
Disable to Valid Data(3)
____
15
____
17
ns
tWH
Write Hold After BUSY(5)
12
____
15
____
ns
BUSY
TIMING (M/S=VIL)
tWB
BUSY
Input to Write(4)
0
____
0
____
ns
tWH
Write Hold After BUSY(5)
12
____
15
____
ns
PORT-TO-PORT DELAY TIMING
tWDD
Write Pulse to Data Delay(1)
____
30
____
45
ns
tDDD
Write Data Valid to Read Data Delay(1)
____
25
____
30
ns
4854 tbl 14


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