Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

70V261L55PFG8 Datasheet(PDF) 7 Page - Integrated Device Technology

Part # 70V261L55PFG8
Description  HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM
Download  17 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

70V261L55PFG8 Datasheet(HTML) 7 Page - Integrated Device Technology

Back Button 70V261L55PFG8 Datasheet HTML 3Page - Integrated Device Technology 70V261L55PFG8 Datasheet HTML 4Page - Integrated Device Technology 70V261L55PFG8 Datasheet HTML 5Page - Integrated Device Technology 70V261L55PFG8 Datasheet HTML 6Page - Integrated Device Technology 70V261L55PFG8 Datasheet HTML 7Page - Integrated Device Technology 70V261L55PFG8 Datasheet HTML 8Page - Integrated Device Technology 70V261L55PFG8 Datasheet HTML 9Page - Integrated Device Technology 70V261L55PFG8 Datasheet HTML 10Page - Integrated Device Technology 70V261L55PFG8 Datasheet HTML 11Page - Integrated Device Technology Next Button
Zoom Inzoom in Zoom Outzoom out
 7 / 17 page
background image
6.42
IDT70V261S/L
High-Speed 16K x 16 Dual-Port Static RAM with Interrupt
Industrial and Commercial Temperature Ranges
7
Waveform of Read Cycles(5)
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(5)
NOTES:
1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and
temperature, the actual tDH will always be smaller than the actual tOW.
5. 'X' in part number indicates power rating (S or L).
NOTES:
1. Timing depends on which signal is asserted last, OE, CE, LB, or UB.
2. Timing depends on which signal is de-asserted first CE, OE, LB, or UB.
3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no
relation to valid output data.
4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD.
5. SEM = VIH.
tRC
R/
W
CE
ADDR
tAA
OE
UB, LB
3040 drw 0
(4)
tACE
(4)
tAOE
(4)
tABE
(4)
(1)
tLZ
tOH
(2)
tHZ
(3,4)
tBDD
DATAOUT
BUSYOUT
VALID DATA
(4)
Symbol
Parameter
70V261X25
Com'l
& Ind
70V261X35
Com'l Only
70V261X55
Com'l Only
Unit
Min.
Max.
Min.
Max.
Min.
Max.
WRITE CYCLE
tWC
Write Cycle Time
25
____
35
____
55
____
ns
tEW
Chip Enable to End-of-Write(3)
20
____
30
____
45
____
ns
tAW
Address Valid to End-of-Write
20
____
30
____
45
____
ns
tAS
Address Set-up Time(3)
0
____
0
____
0
____
ns
tWP
Write Pulse Width
20
____
25
____
40
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
15
____
20
____
30
____
ns
tHZ
Output High-Z Time(1,2)
____
15
____
20
____
25
ns
tDH
Data Hold Time(4)
0
____
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
15
____
20
____
25
ns
tOW
Output Active from End-of-Write(1,2,4)
0
____
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
5
____
ns
3040 tbl 12


Similar Part No. - 70V261L55PFG8

ManufacturerPart #DatasheetDescription
logo
Integrated Device Techn...
70V261L55PFG8 IDT-70V261L55PFG8 Datasheet
190Kb / 17P
   HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM
More results

Similar Description - 70V261L55PFG8

ManufacturerPart #DatasheetDescription
logo
Renesas Technology Corp
70V261 RENESAS-70V261 Datasheet
264Kb / 19P
   HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM
Jun.04.21
logo
Integrated Device Techn...
IDT70V261S IDT-IDT70V261S Datasheet
153Kb / 17P
   HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM
IDT70V26S IDT-IDT70V26S_17 Datasheet
175Kb / 17P
   HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM
IDT70V261S IDT-IDT70V261S_17 Datasheet
190Kb / 17P
   HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM
IDT70V26S IDT-IDT70V26S Datasheet
144Kb / 17P
   HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM
logo
Renesas Technology Corp
70V26 RENESAS-70V26 Datasheet
517Kb / 19P
   HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM
JULY 2019
logo
Integrated Device Techn...
IDT7026S IDT-IDT7026S Datasheet
239Kb / 18P
   HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM
IDT7026S IDT-IDT7026S_15 Datasheet
685Kb / 18P
   HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM
IDT70261S IDT-IDT70261S_18 Datasheet
203Kb / 20P
   HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM
logo
Renesas Technology Corp
70V9279 RENESAS-70V9279 Datasheet
473Kb / 20P
   HIGH-SPEED 3.3V 32/16K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM
AUGUST 2019
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com