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70V08S15PFG8 Datasheet(PDF) 8 Page - Integrated Device Technology |
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70V08S15PFG8 Datasheet(HTML) 8 Page - Integrated Device Technology |
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8 / 21 page  IDT70V08S/L High-Speed 3.3.V 64K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges 8 Timing of Power-Up Power-Down Waveform of Read Cycles(5) NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is de-asserted first CE or OE. 3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD. 5. SEM = VIH. 6. Refer to Chip Enable Truth Table. CE 3740 drw 06 tPU ICC ISB tPD 50% 50% , tRC R/ W CE(6) ADDR tAA OE 3740 drw 05 (4) tACE (4) tAOE (4) (1) tLZ tOH (2) tHZ (3,4) tBDD DATAOUT BUSYOUT VALID DATA (4) |
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