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70V06L35GG8 Datasheet(PDF) 8 Page - Integrated Device Technology |
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70V06L35GG8 Datasheet(HTML) 8 Page - Integrated Device Technology |
8 / 23 page 8 IDT70V06S/L High-Speed 3.3V 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(4) NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed but not tested. 3. To access SRAM, CE = VIL, SEM = VIH. 4. 'X' in part number indicates power rating (S or L). 70V06X35 Com'l Only 70V06X55 Com'l Only Unit Symbol Parameter Min. Max. Min. Max. READ CYCLE tRC Read Cycle Time 35 ____ 55 ____ ns tAA Address Access Time ____ 35 ____ 55 ns tACE Chip Enable Access Time(3) ____ 35 ____ 55 ns tAOE Output Enable Access Time(3) ____ 20 ____ 30 ns tOH Output Hold from Address Change 3 ____ 3 ____ ns tLZ Output Low-Z Time(1,2) 3 ____ 3 ____ ns tHZ Output High-Z Time(1,2) ____ 15 ____ 25 ns tPU Chip Enable to Power Up Time(1,2) 0 ____ 0 ____ ns tPD Chip Disable to Power Down Time(1,2) ____ 35 ____ 50 ns tSOP Semaphore Flag Update Pulse (OE or SEM)15 ____ 15 ____ ns tSAA Semaphore Address Access(3) ____ 35 ____ 55 ns 2942 tbl 11b 70V06X15 Com'l Only 70V06X20 Com'l & Ind 70V06X25 Com'l & Ind Unit Symbol Parameter Min.Max.Min.Max. Min.Max. READ CYCLE tRC Read Cycle Time 15 ____ 20 ____ 25 ____ ns tAA Address Access Time ____ 15 ____ 20 ____ 25 ns tACE Chip Enable Access Time(3) ____ 15 ____ 20 ____ 25 ns tAOE Output Enable Access Time(3) ____ 10 ____ 12 ____ 13 ns tOH Output Hold from Address Change 3 ____ 3 ____ 3 ____ ns tLZ Output Low-Z Time(1,2) 3 ____ 3 ____ 3 ____ ns tHZ Output High-Z Time(1,2) ____ 10 ____ 12 ____ 15 ns tPU Chip Enable to Power Up Time(1,2) 0 ____ 0 ____ 0 ____ ns tPD Chip Disable to Power Down Time(1,2) ____ 15 ____ 20 ____ 25 ns tSOP Semaphore Flag Update Pulse (OE or SEM)10 ____ 10 ____ 10 ____ ns tSAA Semaphore Address Access(3) ____ 15 ____ 20 ____ 25 ns 2942 tbl 11a |
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