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2SD1393 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1393 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD1393 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA, IB= 0 50 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A, IB= 3mA 2.0 V VBE(on) Base-Emitter On Voltage IC= 1.5A; VCE= 3V 2.5 V ICBO Collector Cutoff Current VCB= 50V, IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 50V, IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE-1 DC Current Gain IC= 0.8A; VCE= 3V 1000 15000 hFE-2 DC Current Gain IC= 1.5A; VCE= 3V 500 Switching Times ton Turn-on Time IC= 1.5A; IB1= IB2= 3mA 1.5 μ s ts Storage Time 6.0 μ s tf Fall Time 4.5 μ s |
Similar Part No. - 2SD1393 |
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Similar Description - 2SD1393 |
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