CJL8205 datasheet(2/5 Pages) JIANGSU

Part #	CJL8205

Description	Dual N-Channel MOSFET

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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2 / 5 page

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

STATIC CHARACTERICTISCS

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250µA

19

V

Zero gate voltage drain current

IDSS

VDS =18V,VGS = 0V

1

µA

Gate-body leakage current

IGSS

VGS =±10V, VDS = 0V

±100

nA

Gate threshold voltage (note 3)

VGS(th)

VDS =VGS, ID =250µA

0.

5

0.9

V

Drain-source on-resistance (note 3)

RDS(on)

VGS =4.5V, ID =6A

2

5

mΩ

VGS =2.5V, ID =5A

3

2

mΩ

Forward tranconductance (note 3)

gFS

VDS =5V, ID =4.5A

10

S

Diode forward voltage (note 3)

VSD

IS=1.25A, VGS = 0V

1.2

V

DYNAMIC CHARACTERICTISCS (note4)

Input Capacitance

Ciss

VDS =8V,VGS =0V,f =1MHz

800

pF

Output Capacitance

Coss

155

pF

Reverse Transfer Capacitance

Crss

125

pF

SWITCHING CHARACTERICTISCS (note 4)

Turn-on delay time

td(on)

VDD=10V,VGS=4V,

ID=1A,RGEN=10Ω

18

ns

Turn-on rise time

tr

5

ns

Turn-off delay time

td(off)

43

ns

Turn-off fall time

tf

20

ns

Total Gate Charge

Qg

VDS =10V,VGS =4.5V,ID=4A

11

nC

Gate-Source Charge

Qgs

2.3

nC

Gate-Drain Charge

Qgd

2.5

nC

Notes :

1.Repetitive rating：Pluse width limited by maximum junction temperature

2.Surface Mounted on FR4 board，t≤10 sec.

3. Pulse test : Pulse width≤300μs, duty cycle≤2%.

4. Guaranteed by design, not subject to production.

unless otherwise specified

a

T =25

℃

www.cj-elec.com

2

A-2,May,2015

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CJL8205 Datasheet(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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