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CJMNP517 Datasheet(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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CJMNP517 Datasheet(HTML) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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2 / 6 page  N-ch MOSFET ELECTRICAL CHARACTERISTICS(Ta=25 ℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 12 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±12V, VDS = 0V ±100 nA Gate threshold voltage (note 2) VGS(th) VDS =VGS, ID =250µA 0.5 1 V Drain-source on-resistance(note 2) RDS(on) VGS =10V, ID =6A 24 mΩ VGS =4.5V, ID =5A 27 mΩ VGS =2.5V, ID =4A 42 mΩ VGS =1.8V, ID =2A 74 mΩ Forward tranconductance(note 2) gFS VDS =5V, ID =3.8A 4 S Diode forward voltage VSD IS=1A, VGS = 0V 1 V DYNAMIC CHARACTERISTICS (note 4) Input Capacitance Ciss VDS =10V,VGS =0V,f =1MHz 630 pF Output Capacitance Coss 164 pF Reverse Transfer Capacitance Crss 137 pF SWITCHING CHARACTERISTICS (note 3,4) Turn-on delay time td(on) VGS=5V,VDS=10V, RGEN=6Ω，RL=1.7Ω 5.5 ns Turn-on rise time tr 14 ns Turn-off delay time td(off) 29 ns Turn-off fall time tf 10.2 ns Total Gate Charge Qg VDS=10V,ID=6A, VGS=10V 12 nC Gate-Source Charge Qgs 1 nC Gate-Drain Charge Qgd 2 nC P-ch MOSFET ELECTRICAL CHARACTERISTICS(Ta=25 ℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -12 V Zero gate voltage drain current IDSS VDS =-8V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±8V, VDS = 0V ±100 nA Gate threshold voltage (note 2) VGS(th) VDS =VGS, ID =-250µA -0.5 -0.9 V Drain-source on-resistance(note 2) RDS(on) VGS =-4.5V, ID =-3.5A 45 mΩ VGS =-2.5V, ID =-3A 60 mΩ VGS =-1.8V, ID =-2A 90 mΩ Forward tranconductance(note 2) gFS VDS =-5V, ID =-4.1A 6 S Diode forward voltage VSD IS=-3.3A, VGS = 0V -1.2 V DYNAMIC CHARACTERISTICS (note 4) Input Capacitance Ciss VDS =-4V,VGS =0V,f =1MHz 740 pF Output Capacitance Coss 290 pF Reverse Transfer Capacitance Crss 190 pF SWITCHING CHARACTERISTICS (note 3,4) Turn-on delay time td(on) VGEN=-4.5V,VDD=-4V, ID=-3.3A,RG=1Ω ， RL=1.2Ω 20 ns Turn-on rise time tr 53 ns Turn-off delay time td(off) 48 ns Turn-off fall time tf 20 ns Total Gate Charge Qg VDS=-4V,ID=-4.1A, VGS=-2.5V 9 nC Gate-Source Charge Qgs 1.2 nC Gate-Drain Charge Qgd 1.6 nC Notes : 1.Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse width=300μs, duty cycle≤2%. 3. Switching characteristics are independent of operating junction temperature. 4. Graranted by design，not subject to producting. www.cj-elec.com 2 A-1,Feb,2015 |
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