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10KP100CA Datasheet(PDF) 1 Page - Shanghai Semitech Semiconductor Co., Ltd |
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10KP100CA Datasheet(HTML) 1 Page - Shanghai Semitech Semiconductor Co., Ltd |
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1 / 4 page  4 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD 10KP Series 10000W Axial Leaded Transient Voltage Suppressors . Features l Peak power dissipation 10000W @10 x 1000 us Pulse l Low profile package. l Excellent clamping capability. l Glass passivated junction. l Fast response time: typically less than 1ps from 0 Volts to BV min l Typical IR less than 5uA when VBR min above 24V. l IEC 61000-4-2 ESD 30KV(Air), 30KV(Contact) l ESD protection of data lines in accordance with IEC 61000-4-2 l EFT protection of data lines in accordance with IEC 61000-4-4 l Halogen free and RoHS compliant l Lead-free finish Mechanical Characteristics l CASE: R-6 Molded Plastic l Mounting Position: Any l Polarity: by cathode band denotes uni-directional device, none cathode band denotes bi-directional device. l Terminal: Solder plated Maximum Ratings and Characteristics @ 25°C Ambient Temperature (unless otherwise noted) Parameter Symbol Value Units Peak Pulse Power Dissipation on 10/1000 us Waveform (Note 1, FIG.1) PPPM Min 10000 W Power Dissipation on Infinite Heat Sink at TL=75°C PD 8.0 W Peak Pulse Current of on 10/1000us Waveform (Note 1, FIG.3) IPPM See Table 1 A Peak Forward Surge Current, 8.3ms Single Half Sine-Wave (Note 2) IFSM 400 A Operating Junction Temperature Range TJ -55 to 150 °C Storage Temperature Range TSTG -55 to 150 °C Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above TA=25°C per Fig.2. 2. Measured on 8.3ms single half sine-wave, or equivalent square wave, for Unidirectional device only. Rev. 2.0, 25-Nov.-16 WWW.SEMITECH.CN REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 25.4 --- 1.000 --- B 8.6 9.5 0.34 0.375 C 1.2 1.3 0.048 0.052 D 8.6 9.5 0.340 0.375 Bi-directional Uni-directional Cathode Anode R-6 |
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Similar Description - 10KP100CA |
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