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L034 Datasheet(PDF) 2 Page - IXYS Corporation |
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L034 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 4 page IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Symbol Test Conditions Characteristic Values (T J = 25 °C, unless otherwise specified) min. typ. max. g fs V DS =10V; I D=0.5•ID25 pulsed TBD S C iss 48 nF C oss V GS =0V, V DS=25V, f=1 MHz 8.8 nF C rss 3.1 n F t d(on) 210 n s t r V GS=10V, V DS=0.5•VDSS, I D=0.5•ID25 500 ns t d(off) R G = 1 Ω (External) 900 n s t f 350 n s Q g 2090 n C Q gs V GS=10V, V DS=0.5•VDSS, I D=0.5•ID25 385 n C Q gd 1045 n C R thJC 0.05 6K/W R thJK with 30 µm heat transfer paste 0.08 3K/W Source-Drain Diode Characteristic Values (T J = 25 °C, unless otherwise specified) Symbol Test Conditions min. typ. max. I S V GS =0 385 A I SM Repetitive; pulse width limited by T JM 1540 A V SD I F=I S; V GS=0V, 0.9 1.2 V Pulse test, t ≤300µs, duty cycle d≤2% t rr I F = I S, -di/dt = 1200 A/ Dimensions in mm (1 mm = 0.0394") VMO 380-02 F |
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