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L034 Datasheet(PDF) 2 Page - IXYS Corporation

Part # L034
Description  MegaMOSTMFET Module
Download  4 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

L034 Datasheet(HTML) 2 Page - IXYS Corporation

  L034 Datasheet HTML 1Page - IXYS Corporation L034 Datasheet HTML 2Page - IXYS Corporation L034 Datasheet HTML 3Page - IXYS Corporation L034 Datasheet HTML 4Page - IXYS Corporation  
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072
4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
Symbol
Test
Conditions
Characteristic
Values
(T
J
=
25
°C, unless otherwise specified)
min.
typ. max.
g
fs
V
DS =10V;
I
D=0.5•ID25
pulsed
TBD
S
C
iss
48
nF
C
oss
V
GS
=0V,
V
DS=25V,
f=1
MHz
8.8
nF
C
rss
3.1
n F
t
d(on)
210
n s
t
r
V
GS=10V,
V
DS=0.5•VDSS,
I
D=0.5•ID25
500
ns
t
d(off)
R
G
= 1
Ω (External)
900
n s
t
f
350
n s
Q
g
2090
n C
Q
gs
V
GS=10V,
V
DS=0.5•VDSS,
I
D=0.5•ID25
385
n C
Q
gd
1045
n C
R
thJC
0.05 6K/W
R
thJK
with 30
µm heat transfer paste
0.08 3K/W
Source-Drain
Diode
Characteristic
Values
(T
J
=
25
°C, unless otherwise specified)
Symbol
Test
Conditions
min.
typ. max.
I
S
V
GS =0
385
A
I
SM
Repetitive;
pulse
width
limited
by
T
JM
1540
A
V
SD
I
F=I S;
V
GS=0V,
0.9
1.2
V
Pulse
test,
t
≤300µs, duty cycle d≤2%
t
rr
I
F
=
I
S,
-di/dt
=
1200
A/
Dimensions in mm (1 mm = 0.0394")
VMO 380-02 F


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