MTBH0N25L3-0-T3-G datasheet(5/9 Pages) CYSTEKEC

Part #	MTBH0N25L3-0-T3-G

Description	N-Channel Enhancement Mode MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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5 / 9 page

CYStech Electronics Corp.

Spec. No. : C895L3

Issued Date : 2016.11.26

Revised Date :

Page No. : 5/9

MTBH0N25L3

Preliminary

CYStek Product Specification

Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

10

100

1000

0

10

2030

405060

7080

90 100

VDS, Drain-Source Voltage(V)

C oss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.5

0.7

0.9

1.1

1.3

1.5

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

ID=250μA

ID=1mA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

0.001

0.01

0.1

1

10

ID, Drain Current(A)

Pulsed

Ta=25°C

VDS=15V

VDS=10V

Gate Charge Characteristics

0

2

4

6

8

10

02

4

6

8

10

12

14

Qg, Total Gate Charge(nC)

VDS=125V

VDS=200V

ID=1A

Maximum Safe Operating Area

0.001

0.01

0.1

1

10

0.1

1

10

100

1000

VDS, Drain-Source Voltage(V)

RDS(ON)

Limited

DC

10ms

100ms

1ms

100

μs

10

μs

TA=25°C, Tj=150°C,

RθJA=50°C/W,

Single Pulse

Maximum Drain Current vs Junction Temperature

0

0.2

0.4

0.6

0.8

1

1.2

1.4

25

50

75

100

125

150

175

Tj, Junction Temperature(°C)

VGS=10V, RθJA=50°C/W

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MTBH0N25L3-0-T3-G Datasheet(PDF) 5 Page - Cystech Electonics Corp.

MTBH0N25L3-0-T3-G Datasheet(HTML) 5 Page - Cystech Electonics Corp.

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