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9012Q Datasheet(PDF) 1 Page - Yea Shin Technology Co., Ltd

Part # 9012Q
Description  General Purpose Transistors
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Manufacturer  YEASHIN [Yea Shin Technology Co., Ltd]
Direct Link  http://www.yeashin.com
Logo YEASHIN - Yea Shin Technology Co., Ltd

9012Q Datasheet(HTML) 1 Page - Yea Shin Technology Co., Ltd

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DATA SHEET
SEMICONDUCTOR
http://www.yeashin.com
1
REV.02 20120705
9012P-Q-R-S
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
V
Collector-Base Voltage
VCBO
40
V
Emitter-Base Voltage
VEBO
5V
Collector current-continuoun
IC
500
mAdc
THERMAL CHARATEERISTICS
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,
P D
225
mW
1.8
mW/
oC
Thermal Resistance, Junction to Ambient
R JA
556
oC/W
PD
300
mW
2.4
mW/
oC
Thermal Resistance, Junction to Ambient
R θJA
417
oC/W
Junction and Storage Temperature
Tj ,Tstg
-55 to +150
oC
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA
=25
oC unless otherwise noted)
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
20
-
-
V
(IC=1.0mA)
Emitter-Base Breakdown Voltage
V(BR)EBO
5-
-
V
(IE=100
Collector-Base Breakdown Voltage
V(BR)CBO
40
-
-
V
(IC=100
A)
Collector Cutoff Current (VCB=35V)
ICBO
--
150
nA
Emitter Cutoff Current (VBE=4V)
IEBO
150
nA
Characteristic
Total Device Dissipation
Derate above 25
oC
Rating
TA=25
oC
Derate above 25
oC
Alumina Substrate, TA=25
oC
Characteristic
SOT-23 (TO-236AB)
2
EMITTER
3
COLLECTOR
1
BASE
θ
A)
µ
µ
FEATURE
ORDERING INFORMATION
Device
Shipping
SOT-23
Package
9012P=12P
9012Q=12Q
9012R=12R
9012S=12S
We declare that the material of product compliance with RoHS requirements.
9012X
3000/Tape&Reel
H


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