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70V3579S6DRG8 Datasheet(PDF) 11 Page - Integrated Device Technology |
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70V3579S6DRG8 Datasheet(HTML) 11 Page - Integrated Device Technology |
11 / 17 page 6.42 IDT70V3579S High-Speed 32K x 36 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges 11 tSC tHC CE0(B1) ADDRESS(B1) A0 A1 A2 A3 A4 A5 tSA tHA CLK 4830 drw 07 Q0 Q1 Q3 DATAOUT(B1) tCH2 tCL2 tCYC2 ADDRESS(B2) A0 A1 A2 A3 A4 A5 tSA tHA CE0(B2) DATAOUT(B2) Q2 Q4 tCD2 tCD2 tCKHZ tCD2 tCKLZ tDC tCKHZ tCD2 tCKLZ tSC tHC tCKHZ tCKLZ tCD2 A6 A6 tDC tSC tHC tSC tHC An An + 1 An + 2 An + 3 tCYC2 tCH2 tCL2 R/W ADDRESS CE0 CLK CE1 BE(0-3) (3) DATAOUT OE tCD2 tCKLZ Qn Qn + 1 Qn + 2 tOHZ tOLZ tOE 4830 drw 06 (1) (1) tSC tHC tSB tHB tSW tHW tSA tHA tDC tSC tHC tSB tHB (4) (1 Latency) (5) (5) Timing Waveform of a Multi-Device Pipelined Read(1,2) Timing Waveform of Read Cycle for Pipelined Operation(2) NOTES: 1. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge. 2. ADS = VIL, CNTEN and CNTRST = VIH. 3. The output is disabled (High-Impedance state) by CE0 = VIH, CE1 = VIL, BEn = VIH following the next rising edge of the clock. Refer to Truth Table 1. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. If BEn was HIGH, then the appropriate Byte of DATAOUT for Qn + 2 would be disabled (High-Impedance state). NOTES: 1. B1 Represents Device #1; B2 Represents Device #2. Each Device consists of one IDT70V3579 for this waveform, and are setup for depth expansion in this example. ADDRESS(B1) = ADDRESS(B2) in this situation. 2. BEn, OE, and ADS = VIL; CE1(B1), CE1(B2), R/W, CNTEN, and CNTRST = VIH. |
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