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70V9079S15PFGI8 Datasheet(PDF) 4 Page - Integrated Device Technology |
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70V9079S15PFGI8 Datasheet(HTML) 4 Page - Integrated Device Technology |
4 / 19 page 6.42 IDT70V9089/79S/L High Speed 3.3V 64/32K x 8 Synchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges 4 Recommended DC Operating Conditions RecommendedOperating Temperature and Supply Voltage(1) NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VDD +0.3V for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 0.3V. 3. Ambient Temperature Under Bias. Chip Deselected. Absolute Maximum Ratings(1) NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. 3. COUT also references CI/O. Capacitance (TA = +25°C, f = 1.0MHz) NOTES: 1. This is the parameter TA. This is the "instant on" case temperature. NOTES: 1. VTERM must not exceed VDD +0.3V. 2. VIL > -1.5V for pulse width less than 10ns. Grade Ambient Temperature GND VDD Commercial 0OC to +70OC0V 3.3V + 0.3V Industrial -40OC to +85OC0V 3.3V + 0.3V 3750 tbl 04 Symbol Parameter Min. Typ. Max. Unit VDD Supply Voltage 3.0 3.3 3.6 V VSS Ground 0 0 0 V VIH Input High Voltage 2.2 ____ VDD + 0.3V(1) V VIL Input Low Voltage -0.3(2) ____ 0.8 V 3750 tbl 05 Symbol Rating Commercial & Industrial Unit VTERM(2) Terminal Voltage with Respect to GND -0.5 to +4.6 V TBIAS Temperature Under Bias -55 to +125 o C TSTG Storage Temperature -65 to +150 o C TJN Junction Temperature +150 o C IOUT DC Output Current 50 mA 3750 tbl 06 Symbol Parameter(1) Conditions(2) Max. Unit CIN Input Capacitance VIN = 3dV 9 pF COUT(3) Output Capacitance VOUT = 3dV 10 pF 3750 tbl 07 |
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