BC856BDW datasheet(2/6 Pages) YEASHIN

Part #	BC856BDW

Description	Dual General Purpose Transistors

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Manufacturer	YEASHIN [Yea Shin Technology Co., Ltd]

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REV.02 20120903

BC85xBDW/CDW Series

ELECTRICAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

V (BR)CEO

V

(I C = –10 mA)

BC856 Series

–65

—

BC857 Series

–45

—

BC858 Series

–30

—

Collector–Emitter Breakdown Voltage

V (BR)CES

V

(I C = –10

µA, V

EB = 0)

BC856 Series

–80

—

BC857 Series

–50

—

BC858 Series

–30

—

Collector–Base Breakdown Voltage

V (BR)CBO

V

(I C = –10

µA)

BC856 Series

–80

—

BC857 Series

–50

—

BC858 Series

–30

—

Emitter–Base Breakdown Voltage

V (BR)EBO

V

(I E = –1.0

µA)

BC856 Series

–5.0

—

BC857 Series

–5.0

—

BC858 Series

–5.0

—

Collector Cutoff Current

(V CB = –30 V)

I CBO

—

–15

nA

(V CB = –30 V, T A = 150°C)

—

–4.0

µA

ON CHARACTERISTICS

DC Current Gain

h

FE

—

(I

C = –10 µA, V CE = –5.0 V)

BC856B, BC857B, BC858B

—

150

—

BC857C, BC858C

—

270

—

(I

C = –2.0 mA, V CE =– 5.0 V)

BC856B, BC857B, BC858B

220

290

475

BC857C, BC858C

420

520

800

Collector–Emitter Saturation Voltage (I

C = -10 mA, I B = -0.5 mA) V CE(sat)

—

–0.3

V

Collector–Emitter Saturation Voltage

( I

C = -100 mA, I B = -5.0 mA)

—

–0.65

Base–Emitter Saturation Voltage (I

C = –10 mA, I B = –0.5 mA)

V

BE(sat)

—

–0.7

—

V

Base–Emitter Saturation Voltage

(I

C = –100 mA, I B = –5.0 mA)

—

–0.9

—

Base–Emitter Voltage (I

C = –2.0 mA, V CE = –5.0 V)

V

BE(on)

–0.6

––

–0.75

V

Base–Emitter Voltage

(I

C = –10 mA, V CE = –5.0 V)

—

–0.82

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

f T

100

—

MHz

(I C = –10 mA, V CE = –5.0 Vdc, f = 100 MHz)

Output Capacitance (V CB = –10 V, f = 1.0 MHz)

C obo

—

4.5

pF

Noise Figure (I C = –0.2 mA,

NF

dB

V CE = –5.0 V dc, R S = 2.0 k

Ω, f = 1.0 kHz, BW = 200 Hz)

—

10

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