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2SAR586D Datasheet(PDF) 2 Page - Rohm

Part # 2SAR586D
Description  PNP -5.0A -80V Middle Power Transistor
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

2SAR586D Datasheet(HTML) 2 Page - Rohm

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2SAR586D
　
　 　
　 　
　 　
　　
　 　
　 　 　 　 　 　 　 　
Datasheet
l
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
-80
V
Collector-emitter voltage
VCEO
-80
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-5
A
ICP*1
-10
A
Power dissipation
PD*2
10
W
Junction temperature
Tj
150
℃
Range of storage temperature
Tstg
-55 to +150
℃
l
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Collector-base breakdown voltage
BVCBO
IC = -100μA
-80
-
-
V
Collector-emitter breakdown
voltage
BVCEO
IC = -1mA
-80
-
-
V
Emitter-base breakdown voltage
BVEBO
IE = -100μA
-6
-
-
V
Collector cut-off current
ICBO
VCB = -80V
-
-
-1.0
μA
Emitter cut-off current
IEBO
VEB = -4V
-
-
-1.0
μA
Collector-emitter saturation voltage
VCE(sat)
*3 IC = -2A, IB = -100mA
-
-160
-320
mV
DC current gain
hFE
*3
VCE = -3V, IC = -500mA
120
-
390
-
Transition frequency
fT
*3
VCE = -10V, IE = 500mA,
f = 100MHz
-
200
-
MHz
Output capacitance
Cob
VCB = -10V, IE = 0A,
f = 1MHz
-
100
-
pF
Turn-On time
ton
IC = -2.5A,
IB1 = -250mA,
IB2 = 250mA,
VCC ⋍ -10V,
RL = 3.9Ω
See test circuit
-
40
-
ns
Storage time
tstg
-
350
-
ns
Fall time
tf
-
80
-
ns
*1　Pw=10ms Single Pulse
*2　Tc=25℃
*3　Pulsed
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　
　
　 　 　 　 　　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/6
20161012 - Rev.002


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