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TPCS8212 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # TPCS8212
Description  Silicon N Channel MOS Type (U-MOSIII)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCS8212 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TPCS8212
2002-01-17
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
Rth (ch-a) (1)
114
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2)
167
°C/W
Single-device operation
(Note 3a)
Rth (ch-a) (1)
208
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2)
357
°C/W
Marking (Note 6)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
(a)
(b)
Note 3:
a)
The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b)
The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: VDD = 16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 6 A
Note 5: Repetitive rating; pulse width limited by max channel temperature.
Note 6: ○ on lower right of the marking indicates Pin 1.
* shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively)
Type
S8212
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)


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