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MJE803G Datasheet(PDF) 3 Page - ON Semiconductor

Part # MJE803G
Description  Plastic Darlington Complementary Silicon Power Transistors
Download  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJE803G Datasheet(HTML) 3 Page - ON Semiconductor

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MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
http://onsemi.com
3
0.04
0.2
2.0
0.1
0.06
0.4
1.0
4.0
IC, COLLECTOR CURRENT (AMP)
2.0
1.0
0.8
0.6
0.4
0.2
ts
Figure 2. Switching Times Test Circuit
tr
td @ VBE(off) = 0
PNP
NPN
4.0
0.6
Figure 3. Switching Times
V2
APPROX
+8.0 V
0
≈ 6.0 k
SCOPE
VCC
-30 V
RC
51
For td and tr, D1 id disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
25
ms
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
V1
APPROX
-12 V
TUT
RB
D1
≈ 150
tf
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
0.05
1.0
2.0
5.0
10
20
50
100
200
1000
500
qJC(t) = r(t) qJC
qJC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
0.1
0.5
0.2
Figure 4. Thermal Response (MJE700, 800 Series)
0.03
3.0
30
300
0.3
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
100
2.0
5.0
0.5
Figure 5. MJE700 Series
MJE702, 703
MJE700
dc
1.0
3.0
1.0ms
70
50
30
20
10
7.0
5.0
100
ms
TJ = 150°C
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
Figure 6. MJE800 Series
100
70
50
30
20
10
7.0
5.0
0.2
0.7
0.3
7.0
10
2.0
5.0
0.5
1.0
3.0
0.2
0.7
0.3
7.0
5.0ms
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
100
ms
1.0ms
5.0ms
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE802, 803
MJE800
ACTIVE−REGION SAFE−OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 are based on TJ(pk) = 150
_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.


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