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71V016SA10BFG8 Datasheet(PDF) 3 Page - Integrated Device Technology |
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71V016SA10BFG8 Datasheet(HTML) 3 Page - Integrated Device Technology |
3 / 9 page 3 IDT71V016SA, 3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) Commercial and Industrial Temperature Ranges Symbol Parameter 71V016SA10 71V016SA12 71V016SA15 71V016SA20 Unit Com'l Ind'l Com'l Ind'l Com'l Ind'l Com'l Ind'l ICC Dynamic Operating Current CS ≤ VLC, Outputs Open, VDD = Max., f = fMAX(3) Max. 160 170 150 160 130 130 120 120 mA Typ.(4) 65 -- 60 -- 55 -- 50 -- ISB Dynamic Standby Power Supply Current CS ≥ VHC, Outputs Open, VDD = Max., f = fMAX(3) 45 50 40 45 35 35 30 30 mA ISB1 Full Standby Power Supply Current (static) CS ≥ VHC, Outputs Open, VDD = Max., f = 0(3) 10 10 10 10 10 10 10 10 mA 3834 tbl 08 Absolute Maximum Ratings(1) Recommended Operating Temperature and Supply Voltage DC Electrical Characteristics (VDD = Min. to Max., Commercial and Industrial Temperature Ranges) Capacitance (TA = +25°C, f = 1.0MHz, SOJ package) Recommended DC Operating Conditions DC Electrical Characteristics(1,2) (VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V) NOTE: 1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause permanentdamagetothedevice.Thisisastressratingonlyandfunctionaloperation ofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperational sections of this specification is not implied. Exposure to absolute maximum rating conditionsforextendedperiodsmayaffectreliability. NOTES: 1. For 71V016SA10 only. 2. For all speed grades except 71V016SA10. 3. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle. 4. VIL (min.) = –2V for pulse width less than 5ns, once per cycle. NOTE: 1. Thisparameterisguaranteedbydevicecharacterization,butnotproductiontested. NOTES: 1. All values are maximum guaranteed values. 2. All inputs switch between 0.2V (Low) and VDD – 0.2V (High). 3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing . 4. Typical values are based on characterization data for H step only measured at 3.3V, 25°C and with equal read and write cycles. Symbol Rating Value Unit VDD Supply Voltage Relative to VSS –0.5 to +4.6 V VIN, VOUT Terminal Voltage Relative to VSS –0.5 to VDD+0.5 V TBIAS Temperature Under Bias –55 to +125 o C TSTG Storage Temperature –55 to +125 o C PT Power Dissipation 1.25 W IOUT DC Output Current 50 mA 3834 tbl 03 Grade Temperature VSS VDD Commercial 0°C to +70°C 0V See Below Industrial -40°C to +85°C 0V See Below 3834 tbl 04 Symbol Parameter Min. Typ. Max. Unit VDD(1) Supply Voltage 3.15 3.3 3.6 V VDD(2) Supply Voltage 3.0 3.3 3.6 V Vss Ground 0 0 0 V VIH Input High Voltage 2.0 ____ VDD+0.3(3) V VIL Input Low Voltage –0.3(4) ____ 0.8 V 3834 tbl 05 Symbol Parameter(1) Conditions Max. Unit CIN Input Capacitance VIN = 3dV 6 pF CI/O I/O Capacitance VOUT = 3dV 7 pF 3834 tbl 06 Symbol Parameter Test Condition IDT71V016SA Unit Min. Max. |ILI| Input Leakage Current VDD = Max., VIN = VSS to VDD ___ 5µA |ILO| Output Leakage Current VDD = Max., CS = VIH, VOUT = VSS to VDD ___ 5µA VOL Output Low Voltage IOL = 8mA, VDD = Min. ___ 0.4 V VOH Output High Voltage IOH = –4mA, VDD = Min. 2.4 ___ V 3834 tbl 07 |
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